Factory Lead Time  

14 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

57A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

200W Tc

Turn Off Delay Time  

45 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2004

JESD-609 Code  

e3

Part Status  

Not For New Designs

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

23MOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Voltage - Rated DC  

100V

Peak Reflow Temperature (Cel)  

260

Current Rating  

57A

Time@Peak Reflow Temperature-Max (s)  

30

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

200W

Case Connection  

DRAIN

Turn On Delay Time  

12 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

23m Ω @ 28A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3130pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

130nC @ 10V

Rise Time  

58ns

Vgs (Max)  

±20V

Fall Time (Typ)  

47 ns

Continuous Drain Current (ID)  

57A

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

49A

Drain to Source Breakdown Voltage  

100V

Avalanche Energy Rating (Eas)  

280 mJ

Height  

9.65mm

Length  

10.668mm

Width  

4.826mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free